研究目的
To review recent advances in the heterogeneous integration of III–V lasers on silicon, focusing on bonding technologies, coupling structures, and novel laser configurations for applications beyond traditional telecommunications.
研究成果
Heterogeneous integration of III–V lasers on silicon presents a promising approach for realizing on-chip light sources with high integration density, low cost, and high power efficiency. Despite challenges, advancements in bonding technologies and coupling structures have enabled novel laser configurations for a wide range of applications. The paper concludes that continued research and development, along with new application areas, will drive further progress in this field.
研究不足
The paper discusses the challenges of heterogeneous integration, including the stringent requirements for direct bonding (ultraclean and smooth surfaces) and the thermal resistance introduced by adhesive bonding layers. It also mentions the early stage of research in monolithic integration of quantum dot lasers on silicon, highlighting the need for improved material quality and laser reliability.
