研究目的
To predict injection-dependent minority carrier lifetimes in mc-Si due to point defects (metal interstitials) and extended defects (dislocations), using numerical analysis.
研究成果
Models of non-radiative recombination via metal interstitials and dislocations in mc-Si were developed, and comparisons between the two recombination pathways were made. The calculated fill factors of mc-Si solar cells with point interstitial defects and dislocations reflect carrier lifetime dependences on optical injection. This work is of interest to a broader audience, including those working on concentrator PV cells that use materials other than Si for their designs.
研究不足
The complexity of the problem when considering the combined effect of point and extended defects on carrier recombination was left outside the scope of this paper.
1：Experimental Design and Method Selection:
The model uses experimental parameters for defect concentration, trap energy levels, capture cross-sections for electrons and holes. Predicted lifetimes are then utilized by a device-level model to compute I-V characteristics and the fill factors that depend on optical injection levels.
2：Sample Selection and Data Sources:
A p-type Si wafer is assumed to have an acceptor density of NA=1015 cm-3 and the density of traps of Ntrap=1012 cm-
3：List of Experimental Equipment and Materials:
Not explicitly mentioned.
4：Experimental Procedures and Operational Workflow:
The model is based on the Shockley-Read-Hall (SRH) model for point defects and a similar approach for extended defects, considering band-bending potential near a dislocation.
5：Data Analysis Methods:
The effective NR recombination rate is found by spatial averaging over the area of a wafer.
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