摘要： The distribution and electrical activity of p-type doping (Mg) in gallium nitride (GaN) grown by metal organic chemical vapor deposition was investigated by correlating atom probe tomography (APT) and off-axis electron holography. APT results revealed that high Mg concentrations promote the formation of Mg-rich clusters. This is associated with the formation of pyramidal inversion domains (PIDs). The direct measurement of the doping concentration outside the clusters provided by APT suggests a saturation in the p-type electrical activity for Mg concentrations above 7 × 1019 cm?3. Maps of the electrostatic potential provided by off-axis electron holography confirm that the highest carrier concentration was achieved in the regions with the highest dopant concentration of 2 × 1020 cm?3, despite the presence of a high density of Mg-rich clusters revealed by APT. The correlation of these techniques suggests that PIDs are not the major cause of the reduction in electrostatic potential.