研究目的
Investigating the development of efficient and high-brightness broad area laser diodes designed for high-temperature operation to extend their application spectrum and improve usability.
研究成果
The research demonstrates that optimizing the laser diode design and heat sink can significantly improve the performance and reliability of semiconductor laser diodes at elevated temperatures. This advancement extends their application in high-power and high-temperature environments.
研究不足
The study is limited by the current technological capabilities in semiconductor fabrication and the thermal management of laser diodes. Future work could explore more advanced materials and cooling techniques.
1:Experimental Design and Method Selection:
The study focuses on the design and simulation of semiconductor layer stacks for high thermal efficiency.
2:Sample Selection and Data Sources:
Uses compound semiconductor layers made from gallium, aluminum, indium, and arsenic deposited on gallium arsenide substrates.
3:List of Experimental Equipment and Materials:
Includes epitaxial growth processes, lithography, wet or dry etching, and metal contact deposition.
4:Experimental Procedures and Operational Workflow:
Describes the fabrication of laser diodes, including cleaving and coating laser facets.
5:Data Analysis Methods:
Analyzes optical output power, efficiency, and beam quality parameters.
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