研究目的
Investigating the mechanisms for improving dark current characteristics in barrier infrared photodetectors.
研究成果
The study demonstrates that both pBn and nBn structures can effectively reduce the dark current compared to the p-i-n photodiode without a barrier. An optimum doping density exists to minimize the dark current, with different mechanisms contributing to the dark current in each structure.
研究不足
The study does not account for non-ideal shunt resistance components and defects inducing surface or bulk leakage current, which might affect the dark current in realistic devices.
1：Experimental Design and Method Selection:
The study uses a drift-diffusion-based device simulator to evaluate the dark current characteristics in InAs/GaSb type-II superlattice barrier infrared photodetectors.
2：Sample Selection and Data Sources:
The simulation focuses on pBn and nBn structures with varying doping densities in the barrier region.
3：List of Experimental Equipment and Materials:
The study utilizes a two-dimensional device simulator ATLAS based on the drift-diffusion model.
4：Experimental Procedures and Operational Workflow:
The simulation involves calculating the band diagrams and current density versus applied voltage for different doping densities at temperatures of 77 K and 120 K.
5：Data Analysis Methods:
The analysis includes examining the contributions of diffusion current, generation-recombination current, trap-assistant tunneling, and band-to-band tunneling to the total dark current.
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