研究目的
To mitigate probability of instability and device degradation associated with traditional Cu doping and to tune required band gap as well as to reduce open circuit voltage loss to solar cell device.
研究成果
The study concludes that Bi-doped CdTe thin films annealed at 450 °C exhibit optimized physical properties, including improved crystallite size, maximum absorbance, and ohmic nature, making them suitable for absorber layer applications in high efficiency Cd-based solar cells.
研究不足
The study focuses on the impact of Bi doping and thermal annealing on the physical properties of CdTe thin films for solar cell applications. The limitations include the specific conditions of annealing (temperature range of 150-450 °C) and the concentration of Bi doping (2%). The study does not explore the performance of these films in actual solar cell devices under operational conditions.
1：Experimental Design and Method Selection:
The study employed electron-beam deposition for the development of Bi-doped CdTe thin films followed by air annealing to investigate the impact of thermal annealing on the physical properties of these films.
2：Sample Selection and Data Sources:
High purity CdTe compound material and elemental metal basis Bismuth (Bi) in powder form were used to prepare Bi doped CdTe alloy having 2% Bi content.
3：List of Experimental Equipment and Materials:
The deposition process utilized a Hind High Vacuum modeled unit (BC-300) for e-beam evaporation. Characterization was performed using X-ray diffraction (XRD, Rigaku Ultima IV), UV-Vis. spectrophotometer (Perkin-Elmer Lambda-750), atomic force microscope (AFM, NT-MDT), field emission scanning electron microscope (FESEM), and energy dispersive spectroscopy (EDS, Bruker).
4：Experimental Procedures and Operational Workflow:
The films were deposited on cleaned substrates and then air annealed in the temperature range of 150-450 °C. The physical properties of the films were then characterized using the aforementioned techniques.
5：Data Analysis Methods:
The structural, optical, electrical, and topographical properties of the films were analyzed to determine the impact of Bi doping and thermal annealing.
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X-ray diffraction (XRD)
Rigaku Ultima IV
Rigaku
Examination of crystal structure and crystallographic parameters
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UV-Vis. spectrophotometer
Perkin-Elmer Lambda-750
Perkin-Elmer
Optical absorbance and transmittance measurements
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Energy dispersive spectroscopy (EDS)
Bruker
Bruker
Elemental composition identification
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Source meter
Agilent B2901A
Agilent
Transverse current-voltage (I-V) measurements
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CdTe compound material
Sigma Aldrich
Source material for deposition of CdTe:Bi films
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Bismuth (Bi) in powder form
Alfa Aesar
Dopant for CdTe films
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Atomic force microscope (AFM)
NT-MDT
NT-MDT
Surface topographical studies
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Field emission scanning electron microscope (FESEM)
Morphological images of the films surface
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