研究目的
Investigating the use of monocrystal silicon (c-Si) as a substrate and charge injection layer to alleviate thermal effects in perovskite light-emitting diodes (PeLEDs) for improved device stability and efficiency.
研究成果
The study successfully demonstrated that c-Si substrates can significantly improve the heat dissipation in PeLEDs, leading to reduced efficiency droop and extended operational lifetime. The feasibility of c-Si-based PeLEDs for dynamic and static EL display applications was confirmed.
研究不足
The study acknowledges the challenges in achieving high device performance due to light absorption by c-Si substrate and the need for further optimization of charge injection balance and light out-coupling efficiency.
1：Experimental Design and Method Selection:
The study involved the fabrication of PeLEDs using c-Si as both substrate and hole transport layer, with optimization of charge injection balance through the incorporation of SiOx and TFB layers.
2：Sample Selection and Data Sources:
Perovskite films were deposited on PVK/c-Si substrates, and their properties were characterized using SEM, AFM, XRD, UV-vis absorption, and PL spectroscopy.
3：List of Experimental Equipment and Materials:
Equipment included SEM, AFM, XRD, UV-vis spectrophotometer, and PL spectrometer. Materials included c-Si substrates, PVK, perovskite precursors, SiOx, TFB, and metal electrodes.
4：Experimental Procedures and Operational Workflow:
The process involved substrate preparation, layer deposition, device fabrication, and performance testing under various conditions.
5：Data Analysis Methods:
Performance metrics such as EQE, CE, and luminance were analyzed, and thermal properties were assessed using temperature monitoring.
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