研究目的
To gain a deeper understanding of the growth mechanism of ALD-TZO as well as to prove its feasibility as TCO in optoelectronic devices, and in particular in Si NW based solar cells by reporting the first application of ALD-TZO thin films as TCO.
研究成果
ALD-TZO shows great potentials as an efficient top electrode in nanostructured photovoltaic devices and optoelectronic devices in general, and its potential to replace ITO has been proven. These findings open the way to many other possible applications of TZO as ITO-alternative for optoelectronic devices.
研究不足
The study focuses on the optimization of TZO films for application in Si NW solar cells, and while it demonstrates superior EQE response compared to ITO, the efficiency of the solar cells is relatively low (2.5%). The study does not explore the long-term stability or scalability of the ALD-TZO films for industrial applications.
1：Experimental Design and Method Selection:
TZO thin films were prepared in a BENEQ TFS-200 ALD reactor using diethylzinc (DEZ), titanium (IV) i-propoxide (TTIP), and deionized water as precursors. Nitrogen was used as both carrier and purging gas. Experiments were performed at Tdep = 200 °C.
2：Sample Selection and Data Sources:
Thin films were deposited simultaneously on borosilicate glass, single- and double-polished n-doped Si (100) wafer with native oxide top layer.
3：List of Experimental Equipment and Materials:
BENEQ TFS-200 ALD reactor, diethylzinc (DEZ), titanium (IV) i-propoxide (TTIP), deionized water, nitrogen.
4：Experimental Procedures and Operational Workflow:
TZO film depositions were performed with the following program: [TZO] = n . (n
5：{ZnO} + {TiO2}) where n and n1 are the number of supercycles and the ratio of ZnO and TiO2 cycles {ZnO}:
{TiO2}, respectively.
6：Data Analysis Methods:
Thin film thicknesses were determined by spectroscopic ellipsometry and X-ray reflectivity. Thin film compositions and morphologies were obtained using SEM equipped with an EDS detector. Transmittance and reflectance spectra were obtained using an Agilent Cary 500 UV-Vis-NIR spectrophotometer. Electrical measurements were performed using four-point probe measurement setup and an ECOPIA HMS-5000 system for Hall effect measurement.
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