研究目的
To determine how the data stored in single RRAMs could be altered by a laser test under different conditions of source power, spot size, and device size.
研究成果
The experiments showed that RRAM devices did not exhibit faulty behaviors under laser attack under the tested conditions. However, a catastrophic failure occurred when a continuous laser test was applied, destroying the device's resistive switching behavior. These results contribute to understanding RRAM devices' resilience against laser attacks and highlight the need for further research to develop strategies to mitigate such attacks.
研究不足
The study did not observe faulty behaviors in RRAM devices under laser attack, but discrepancies with other works suggest the need for further research to understand the influence of laser irradiation on RRAM-based circuits fully.
1：Experimental Design and Method Selection:
The study involved conducting laser tests on individual RRAM devices to assess their response to laser attacks under various conditions.
2：Sample Selection and Data Sources:
RRAM devices of different sizes (2×2 μm2, 5×5 μm2, and 15×15 μm2) were used.
3：List of Experimental Equipment and Materials:
A Keysight B2912A Precision Source/Measure Unit (SMU) for electrical characterization, and laser sources with wavelengths of 1064 nm, 1024 nm, and 976 nm for the laser tests.
4：Experimental Procedures and Operational Workflow:
The devices were first electroformed and then subjected to resistive switching behavior assessment under DC. Laser tests were conducted with varying source powers, spot sizes, and resistance states of the devices.
5：Data Analysis Methods:
The resistance states of the RRAMs were measured before and after laser pulses to assess any changes.
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