研究目的
Investigating the photoelectric process in single electron charged spherical GaAs/Ga1-yAlyAs quantum dot, focusing on the total cross section variation with incident photon energy and molar concentration of Al in the matrix material.
研究成果
The total cross section of the photoelectric process in a single electron charged spherical GaAs/Ga1-yAlyAs quantum dot changes with the incident photon energy near threshold and the molar concentration of Al in Ga1-yAlyAs. The GaAs quantum dots could be useful for devices based on the photoelectric process.
研究不足
The study is theoretical and focuses on a specific type of quantum dot (GaAs/Ga1-yAlyAs). The practical application and experimental validation are not discussed.
1：Experimental Design and Method Selection:
The study uses the effective mass approximation with finite potential at the dot matrix interface, including the effect of self-energy.
2：Sample Selection and Data Sources:
The study focuses on a single electron charged spherical GaAs/Ga1-yAlyAs quantum dot.
3：List of Experimental Equipment and Materials:
Not explicitly mentioned.
4：Experimental Procedures and Operational Workflow:
The wave functions and energy levels of QDs are obtained by solving the Schr?dinger wave equation with the finite potential at the dot matrix interface including the effect of self-energy.
5：Data Analysis Methods:
The total cross section for the photoelectric process is calculated by integrating the differential cross-section over all angles of ejected electrons.
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