1：Experimental Design and Method Selection:

The study involves the fabrication of a p-Si/n-ZnO heterostructure self-powered photodetector and its modification through UV irradiation to reduce surface and interface states. The pyro-phototronic effect is utilized to enhance the device's performance.

2：Sample Selection and Data Sources:

A p-type Si wafer is used as the substrate, with ZnO nanowires grown hydrothermally to form the heterojunction.

3：List of Experimental Equipment and Materials:

Equipment includes RF magnetron sputtering for ZnO seed layer deposition, a mechanical convection oven for hydrothermal growth, and various lasers for UV irradiation and testing. Materials include Zn(NO3)2 and hexamethylenetetramine for ZnO nanowire growth.

4：Experimental Procedures and Operational Workflow:

The process involves cleaning the Si wafer, depositing a ZnO seed layer, growing ZnO nanowires, and sputtering ITO and Ag films as electrodes. The device is then subjected to UV irradiation to modify its surface states.

5：Data Analysis Methods:

The performance of the photodetector is analyzed through I-V and C-V measurements, photoluminescence spectra, and absorption spectra to assess the impact of UV irradiation on the device's optoelectronic properties.