研究目的
Investigating the optical gain in laser heterostructures with an active area based on an InGaAs/InGaAlAs superlattice for laser diodes operating in the spectral range between 1535 and 1565 nm.
研究成果
The active area based on the superlattice demonstrates higher gain for equal values of the pump-current density relative to the active area based on a set of seven QWs. This suggests that using an active area based on a short-period superlattice in long-wavelength VCSELs may result in better dynamic characteristics and a lower threshold current.
研究不足
The study is limited to laser diodes operating in the spectral range between 1535 and 1565 nm. The comparison is made only between active areas based on quantum wells and superlattices, without exploring other potential active area designs.
1：Experimental Design and Method Selection:
The study involved the fabrication of laser heterostructures for edge emission of radiation on InP (100) substrates by molecular beam epitaxy. The structural quality was analyzed by X-ray diffraction.
2：Sample Selection and Data Sources:
Two types of active areas were used: one based on seven mechanically stressed In
3：74Ga26As QWs and another based on a superlattice of In57Ga43As quantum wells with In52Ga27Al21As potential barriers. List of Experimental Equipment and Materials:
The heterostructures were fabricated using the Riber MBE 49 system. X-ray diffraction spectra were obtained using a PANalytical X’PertPro diffractometer.
4：Experimental Procedures and Operational Workflow:
Fabry–Pérot stripe lasers with different cavity lengths were fabricated and their characteristics analyzed. The lasers were mounted on a copper heat sink, and their emission spectra were obtained under pulsed current pumping.
5：Data Analysis Methods:
Mode gain was calculated based on the differential quantum efficiency and the laser cavity length.
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