摘要： Modern electronics faces the degradation of metal interconnection performance in integrated circuits with nanoscale feature dimensions of transistors. The application of constructively and technologically integrated optical links instead of metal wires is a promising way of the problem solution. Previously, we proposed the advanced design of an on-chip injection laser with an AIIIBV nanoheterostructure, and a functionally integrated optical modulator. To implement the efficient laser-modulator-based optical interconnections, technologically compatible photodetectors with subpicosecond response time and sufficient sensitivity are required. In this paper, we introduce the concept of a novel high-speed photodetector with controlled relocation of carrier density peaks. The device includes a traditional p-i-n photosensitive junction and an orthogonally oriented control heterostructure. The transverse electric field displaces the peaks of electron and hole densities into the regions with low carrier mobilities and lifetimes during the back edge of an optical pulse. This relocation results in the fast decline of photocurrent that does not depend on the longitudinal transport of electrons and holes. We develop a combined numerical model based on the Schrodinger-Poisson equation system to estimate the response time of the photodetector. According to the simulation results, the steep part of the photocurrent back edge has a duration of about 0.1 ps.