研究目的
Investigating the enhancement of external quantum efficiency and lifetime in quantum dot light-emitting diodes (QLEDs) through the use of a blended hole transport layer (HTL) consisting of polymer TFB and cross-linkable small molecule CBP-V.
研究成果
The blended HTL consisting of TFB and CBP-V significantly improves the external quantum efficiency and operational lifetime of red QLEDs. The crosslinked blended HTL also exhibits excellent solvent resistance, making it suitable for inkjet-printed QLEDs. The study demonstrates the potential of the blended HTL for the development of highly efficient and stable printed QLEDs.
研究不足
The study is limited to cadmium-based QLEDs and does not explore the application of the blended HTL in other types of QLEDs. The solvent resistance of the blended HTL is tested only with chlorobenzene, and its performance with other solvents is not extensively studied.
1：Experimental Design and Method Selection:
The study involved the fabrication of red QLED devices with a layer structure of ITO/PEDOT: PSS/HTL/QDs/Zn
2：9Mg1O/Al. The HTL was a blend of TFB and CBP-V in various weight ratios. Sample Selection and Data Sources:
The samples were prepared by spin-coating and inkjet printing methods. The performance of the devices was evaluated based on their electroluminescent properties.
3：List of Experimental Equipment and Materials:
The materials used included TFB, CBP-V, PEDOT: PSS, CdZnSe/ZnS QDs, and Zn
4：9Mg1O NPs. The equipment included a spin coater, inkjet printer, and vacuum deposition system. Experimental Procedures and Operational Workflow:
The HTL was spin-coated or inkjet-printed onto the substrate, followed by the deposition of the QDs layer and the electron transport layer. The devices were then encapsulated and characterized.
5：Data Analysis Methods:
The performance of the devices was analyzed using electroluminescent spectroscopy, current-voltage measurements, and impedance spectroscopy.
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