1：Experimental Design and Method Selection:

The study involves the fabrication of a light signal transmitter with an ultra-small active area using a double-etching process on a GaN-on-silicon platform. The optoelectronic properties of the transmitter are characterized, including its electroluminescence (EL) and light output power-current-voltage (L-I-V) characteristics.

2：Sample Selection and Data Sources:

The III-Nitride epitaxial layer of GaN-on-silicon platform is used, consisting of various layers including p-contact GaN layer, p-cladding AlGaN layer, InGaN/GaN MQWs, n-cladding AlGaN layer, and others.

3：List of Experimental Equipment and Materials:

Equipment includes a semiconductor device parameter analyzer (Agilent, B1500A), a spectrometer in the ultraviolet range, an optical power meter, and a probe station. Materials include metal films (Pd/Pt/Au) deposited by electron beam (EB) evaporation.

4：Experimental Procedures and Operational Workflow:

The fabrication process involves patterning the active area on metal films, transferring to III-Nitride epitaxial layer by ICP etching, depositing a silicon oxide layer for electrical isolation, and forming p/n electrodes by EB evaporation and lift-off process.

5：Data Analysis Methods:

The study analyzes the EL and L-I-V characteristics, C-V characteristics under different AC signal frequencies, and conducts a free-space data transmission test to evaluate the transmission speed.