研究目的
Investigating the nonradiative recombination processes through defect states and their temperature dependence in UV-B AlGaN MQW samples to improve the efficiency of UV-B LED structures.
研究成果
The study successfully detected and characterized nonradiative recombination centers in UV-B AlGaN MQW samples using TWEPL technique. The temperature-dependent PL intensity for the most-dominant BGE energy of 1.27 eV was interpreted by three NRR centers, with the one-level model dominating in the temperature range 58 K < T < 88 K and the two-level model prevailing in other temperature regions. The combination of these models is consistent with the spectral peak-energy shift as a function of temperature.
研究不足
The study is limited to UV-B AlGaN MQW samples grown on sapphire substrates by MOCVD technique. The findings may not be directly applicable to samples grown under different conditions or with different materials.
