研究目的
To reduce power consumption of the display while supporting high refresh rate driving up to 120 Hz by utilizing both p-type low-temperature polycrystalline silicon (p-LTPS) and n-type indium–gallium–zinc–oxide (n-IGZO) thin-film transistors (TFTs) in pixel circuits and gate driver on array (GOA).
研究成果
The proposed pixel and GOA circuit using top-gate n-oxide and p-LTPS TFT is suitable for high refresh rate and low power consumption AMOLED display. The prototype panel demonstrated the ability to display without any bright spot or unevenness from 1-Hz low refresh rate driving to 120-Hz high refresh rate driving, with power consumption reduced to approximately 70% at 1-Hz drive compared to 120-Hz drive.
研究不足
The study focuses on a specific pixel circuit and GOA design for AMOLED displays, and the results are based on a prototype 6.39-in FHD+ flexible OLED display. The applicability to larger or different resolution displays may require further investigation.
