研究目的
To investigate the realization of a random laser with an ultralow threshold based on individual polycrystalline GaTe microflakes and to explore the dependence of spatially localized cavities’ dimension on the pumping intensity profile and temperature.
研究成果
The study successfully demonstrated the fabrication of a random laser based on individual polycrystalline GaTe microflakes with an ultralow threshold of 4.15 kW cm-2. The findings highlight the potential of polycrystalline GaTe for optoelectronic applications, offering a novel approach to achieving random lasers with small size and low threshold.
研究不足
The study is limited by the technical challenges in controlling the grain size and distribution in polycrystalline GaTe microflakes, which are crucial for optimizing the random lasing performance. Additionally, the temperature-dependent studies were conducted up to 100 K, leaving room for further investigation at higher temperatures.
1：Experimental Design and Method Selection:
The study involved the synthesis of polycrystalline GaTe microflakes using physical vapor deposition (PVD) and the characterization of their structural and optical properties to investigate random lasing phenomena.
2：Sample Selection and Data Sources:
Polycrystalline GaTe microflakes were synthesized under controlled growth conditions. The samples were characterized using SEM, TEM, XRD, XPS, and Raman spectroscopy.
3：List of Experimental Equipment and Materials:
Equipment included a tube furnace system for PVD, SEM (Hitachi S4800), TEM (JEOL 2100), XRD (PANalytical), XPS (ESCALAB 250Xi), and a Raman spectroscopy system. Materials included GaTe powder and SiO2/Si substrates.
4：Experimental Procedures and Operational Workflow:
The synthesis involved heating GaTe powder in a tube furnace, followed by characterization of the resulting microflakes. Optical measurements were conducted using a micro-PL setup with a 410 nm laser source.
5：Data Analysis Methods:
The lasing characteristics were analyzed through PL spectra and fast Fourier transform (FFT) analysis to study the formation of localized random cavities.
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