研究目的
Investigating the influence of deformation on the energy spectrum of electrons and holes in InAs/GaAs heterostructure with InAs quantum dots and the modulation of radiation energy at the recombination transition between the ground states of electron and hole.
研究成果
The theoretical calculation of the energy modulation (spectral line width) qualitatively coincides with the experimental data. The reduction of the QD radius results in an increase in the modulation amplitude of the radiation energy, which is explained by the growth of deformations in the QD material.
研究不足
The model does not take into account nonlinear effects, which are significant for large deformations. The relative change in intensity with increasing pressure is well-coordinated only at low pressures.
1：Experimental Design and Method Selection:
The study uses an electron-deformation model to investigate the influence of deformation on the energy spectrum of electrons and holes in InAs/GaAs heterostructure with InAs quantum dots.
2：Sample Selection and Data Sources:
The samples are InAs/GaAs heterostructures with InAs quantum dots.
3：List of Experimental Equipment and Materials:
The study involves theoretical calculations and does not specify experimental equipment.
4：Experimental Procedures and Operational Workflow:
The methodology includes calculating the components of the strain tensor in the spherical InAs quantum dot and in the GaAs matrix with regard for acoustic wave effects.
5：Data Analysis Methods:
The energy spectra and the wave functions for an electron and a hole are found by solving the non-stationary Schrodinger equation.
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