研究目的
Investigating the impact of anode recess on the reverse leakage current, forward voltage (VF), and dynamic characteristics of Au-free AlGaN/GaN Schottky barrier diodes with a gated edge termination (GET-SBDs) on 200-mm silicon substrates.
研究成果
The study demonstrated a gradual reverse leakage current reduction of the GET-SBD architecture by improving the electrostatic control at the GET region through increasing number of anode recessing cycles. GET-SBDs with more ALE cycles achieved a median leakage value of ～1 nA/mm and a forward voltage of 1.3 V. The study also identified variations in the ON-state characteristics due to the ALE process, leading to a larger spread of the VF and RON when six ALE cycles were applied.
研究不足
The study is limited to Au-free AlGaN/GaN Schottky barrier diodes with a gated edge termination on 200-mm silicon substrates. The impact of anode recess on other types of diodes or substrates was not investigated.
1：Experimental Design and Method Selection:
The study involved increasing the number of atomic layer etching (ALE) cycles for anode recessing to investigate its impact on the electrical characteristics of GET-SBDs.
2：Sample Selection and Data Sources:
AlGaN/GaN epitaxial layers were grown on 200-mm silicon wafers by metalorganic chemical vapor deposition (MOCVD).
3：List of Experimental Equipment and Materials:
Equipment included an Agilent 4073 Ultra Advanced Parametric Tester and an Agilent B1505A Semiconductor Device Analyzer. Materials included AlGaN/GaN epitaxial layers and Si3N4 passivation layers.
4：Experimental Procedures and Operational Workflow:
The study involved forward and reverse characterizations of the GET-SBDs, BD and pulsed I–V measurements, and TCAD electrical simulations.
5：Data Analysis Methods:
Statistical analysis of leakage current, turn-ON and forward voltages with ALE cycles was performed. TCAD simulations were used to confirm experimental results.
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