研究目的
To design a rectifier that maintains good efficiency over a wide input power range at 2.45 GHz frequency using a MOSFET as the voltage controlled switch (VCS).
研究成果
A rectifier operating at 2.45 GHz has been presented to execute a seamless handover between two varying input power diodes. Based on L-matching using reactive components, the rectifier impedance was matched to the emulated antenna impedance for maximum power transfer and optimized for both low and high power level operation.
研究不足
The high operating frequency increases the switching losses and this degrades the performance of the rectifier. So unless new semiconductor switches are developed, it will always remain a challenge to maintain higher efficiencies over a wide input power range at high frequencies.
1：Experimental Design and Method Selection:
The design centered around choosing diodes with low threshold voltage for low input power applications and high breakdown voltage for high input power applications. A MOSFET was used as a voltage controlled switch to automate a conducting schedule based on the received power.
2：Sample Selection and Data Sources:
Two diodes from Avago (HSMS-2820 and HSMS-2850) were chosen as the rectifying elements.
3：List of Experimental Equipment and Materials:
The CE3512K2 from CEL was chosen as the switch.
4：Experimental Procedures and Operational Workflow:
The MOSFETs are grounded and thus see the same source-to-gate voltage as the rectified output voltage VDC. The gate-to-source voltage VGS that turns on the diode under low power conditions is hence the inverse of VDC which is almost 0 V.
5：Data Analysis Methods:
The RF to DC conversion efficiency was calculated using the received output power in DC, the RF input power from the antenna, the output voltage and the value of the load resistance.
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