研究目的
Investigating the effects of a thiourea treatment on the performance of Cu(In,Ga)Se2 (CIGS) solar cells.
研究成果
The thiourea treatment improved the open-circuit voltage, fill factor, and conversion efficiency of CIGS solar cells by suppressing carrier recombination and improving film quality. The treatment is promising for enhancing the performance of CIGS solar cells.
研究不足
The study did not directly observe the presence of a potential sulfide layer at the CdS/CIGS heterointerface or diffusion of passivating S atoms to the CIGS bulk through SIMS measurements. The distribution of S atoms in the CIGS film and its effect on solar cell performance will be a subject for future studies.
1：Experimental Design and Method Selection:
The study involved a thiourea treatment on CIGS absorbers before CdS deposition to explore its effects on solar cell performance.
2：Sample Selection and Data Sources:
CIGS films were fabricated on Mo-coated soda-lime glass by co-evaporation using a molecular beam epitaxy apparatus.
3：List of Experimental Equipment and Materials:
A molecular beam epitaxy apparatus equipped with Knudsen cells containing elemental Cu, In, Ga, and Se was used for CIGS film fabrication.
4：Experimental Procedures and Operational Workflow:
The absorbers were immersed in a
5：5 M HCl solution at 50 °C for 30 s, then in a 1 M thiourea solution at 67 °C for 60 min. CdS buffer layer was grown by chemical bath deposition. Data Analysis Methods:
The solar cells were evaluated by measuring J–V properties under AM1.5G illumination, capacitance–voltage measurements, and cross-sectional electron-beam-induced current measurements.
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