研究目的
Development and study of the p–i–n GaAs/AlGaAs tunnel diodes for multijunction converters of high-power laser radiation.
研究成果
The study established the nonmonotonic dependence of the peak current density of the p–i–n tunnel diode on the i-type layer thickness, with an optimal thickness yielding a peak current density of 280 A/cm2. Experimental p–i–n tunnel diodes with peak current densities up to 200 A/cm2 were successfully grown, showing good agreement with calculated characteristics.
研究不足
The complexity of implementation of n-type conductivity in Ga(Al)As, anomalous diffusion of Be atoms, and the need for precise control of epitaxial-growth temperature and dopant incorporation.
1：Experimental Design and Method Selection:
Numerical simulation of the J–U characteristics of tunnel diodes using the Silvaco Atlas software package.
2：Sample Selection and Data Sources:
p–i–n-GaAs/Al
3：2Ga8As structures grown by molecular-beam epitaxy. List of Experimental Equipment and Materials:
SemiTEq two-reactor facility for MBE, Veeco arsenic source, CAMECA IMS-7f facility for SIMS.
4：Experimental Procedures and Operational Workflow:
Growth of TD structures, formation of diode array, measurement of J–U characteristics.
5：Data Analysis Methods:
Comparison of experimental and calculated J–U characteristics, analysis of peak tunneling-current density dependence on i-type layer thickness.
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