研究目的
Investigating the fabrication and optoelectronic properties of Ga2O3/Eu epitaxial ?lms on nanoporous GaN distributed Bragg re?ectors to improve the internal quantum ef?ciency (IQE) and light extracting ef?ciency (LEE) of rare-earth-doped Ga2O3 thin ?lms.
研究成果
The 900°C-annealed Ga2O3/Eu ?lm on NP-GaN DBRs exhibited the best crystalline quality and highest PL ef?ciency, with a 20-fold enhancement in PL emission compared to the reference ?lm. The good electrical properties of the annealed ?lms suggest potential applications in rare-earth-doped Ga2O3 optoelectronic devices.
研究不足
The study is limited by the thermal mismatch between the ?lm and substrate at higher annealing temperatures, which affects the crystal quality. The PL intensity enhancement is dependent on the DBR's re?ectivity and the ?lm's crystalline quality.
1：Experimental Design and Method Selection:
The study used nanoporous GaN distributed Bragg re?ectors (DBRs) fabricated via a doping selective electrochemical etching process to deposit Eu-doped b-Ga2O3 ?lms by pulsed layer deposition (PLD). The ?lms were annealed at different temperatures to study their structural and optoelectronic properties.
2：Sample Selection and Data Sources:
GaN-based wafers with 10 pairs of undoped GaN (u-GaN)/n-GaN were used to fabricate NP-GaN DBRs. The Ga2O3/Eu ?lms were grown on these DBRs and on reference unetched GaN substrates.
3：List of Experimental Equipment and Materials:
SEM (Nova NanoSEM 450), XRD (Philips X’Pert PRO), XPS (ESCALAB MK II), HRTEM (JEM-2100), Shimadzu TV-1900 spectrophotometer, and a PLD system with a KrF laser.
4：Experimental Procedures and Operational Workflow:
The GaN wafers were etched to create DBRs, followed by the deposition of Ga2O3/Eu ?lms using PLD. The ?lms were annealed at 800°C, 900°C, and 1000°C. Structural, chemical, and optical characterizations were performed.
5：Data Analysis Methods:
The crystalline quality and epitaxial relationship were analyzed using XRD and HRTEM. XPS was used for chemical composition analysis. PL measurements were performed to evaluate the optoelectronic properties.
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