研究目的
Investigating the temperature dependence of the elastic constants of doped silicon and its impact on the frequency-temperature dependence of MEMS resonators.
研究成果
The extracted temperature-dependent elastic constants allow for the prediction of the frequency-temperature dependence of doped silicon resonators. Heavy p-type doping significantly affects the temperature dependence of s44, enabling frequency-temperature turnover points for resonant modes dependent on s44. N-type doping achieves similar effects through s11 and s12. Predictions for arbitrary linear bulk resonant modes can be made with about 20 ppm accuracy.
研究不足
Process variations, dimensional offsets, rotational misalignment, temperature inaccuracies, and assumptions about thermal expansion and density may introduce uncertainties in the extracted elastic constants and their temperature dependences.
