研究目的
To demonstrate a sapphire nano-membrane array for growth of a discrete micro-LED array without harmful plasma etching process, aiming to improve internal quantum efficiency and reduce threading dislocation density.
研究成果
The study successfully demonstrated a core-shell-like micro-LED array grown on a sapphire nano-membrane array, showing significant improvements in internal quantum efficiency and reduction in threading dislocation density. This approach provides a promising platform for high-efficiency micro-LEDs without the need for harmful plasma etching.
研究不足
The study focuses on the fabrication and initial characterization of micro-LEDs on sapphire nano-membranes. Further optimization of the growth conditions and device processing is needed for practical applications.
1：Experimental Design and Method Selection:
Fabrication of a sapphire nano-membrane array and subsequent growth of a discrete micro-LED array.
2：Sample Selection and Data Sources:
Use of a 2-inch c-plane sapphire substrate for the nano-membrane array.
3：List of Experimental Equipment and Materials:
Atomic layer deposition (ALD) system, MOCVD chamber, field emission scanning electron microscope, micro-Raman spectroscopy system, cathodoluminescence system.
4：Experimental Procedures and Operational Workflow:
Photolithography, ALD of amorphous alumina, wet etching, thermal treatment for crystallization, epitaxial growth of GaN and InGaN/GaN MQWs.
5：Data Analysis Methods:
Analysis of stress states by Raman spectroscopy, estimation of internal quantum efficiency by temperature-dependent photoluminescence, observation of threading dislocation density by cathodoluminescence.
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