摘要： The influence of an ultrathin GaP (or GaAs) sublayer on the nonradiative intraband relaxation in InAs/InGaAsP/InP quantum dots (QDs) is investigated. It is found that, based on our studies, the QDs with some heights (e.g., 1.5 nm) and GaP sublayer thicknesses (e.g., 1.03 monolayers) present the first excited state (ES) with higher state degeneracy with respect to ground state (GS), which suggests that the Auger relaxation is triggered more easily. We also find that the energy difference of the ES and GS decreases with increasing sublayer thickness, which suggests that the electron–phonon interaction is affected. This work further presents a study of intraband relaxation for an InAs/InP QD with a GaP or GaAs sublayer. It is found that there is a critical thickness of the GaP sublayer: When the sublayer is less than the critical thickness, the intraband relaxation is only determined by one-longitudinal optical (LO) phonon or two-LO phonons, which is dependent on QD heights. However, with the GaAs sublayer, QDs do not have the above feature. This finding may be helpful for designing and optimizing high-speed QD devices.