研究目的
Investigating the mechanism behind the high electron mobility of HAT-CN transport layers in thick OLEDs and their impact on current density.
研究成果
The high electron mobility (0.1–1 cm2 V?1 s?1) of HAT-CN layers enables the fabrication of thicker OLEDs without significant decrease in current density. The horizontal orientation of HAT-CN molecules contributes to this high mobility, but other mechanisms may also play a role.
研究不足
The study does not fully explain the mechanism behind the high electron mobility of amorphous-like HAT-CN films. The variation in measured electron mobilities among samples suggests potential reproducibility issues.
1:Experimental Design and Method Selection:
The study involved fabricating OLEDs and single-carrier devices with varying thicknesses of HAT-CN and tris-PCz layers to analyze current density and electron mobility.
2:Sample Selection and Data Sources:
Samples included OLEDs with different HAT-CN thicknesses and single-carrier devices for electron mobility measurement.
3:List of Experimental Equipment and Materials:
Used materials include HAT-CN, tris-PCz, ITO, MoOx, Al, and LiF. Equipment details not specified.
4:Experimental Procedures and Operational Workflow:
Fabrication of devices followed by measurement of current density vs voltage curves and electron mobility using SCLC model.
5:Data Analysis Methods:
Analysis of current density vs voltage curves using SCLC equation to estimate electron mobility.
独家科研数据包,助您复现前沿成果,加速创新突破
获取完整内容