研究目的
To develop robust methods to deposit thin high-k dielectrics on SiGe surfaces with low leakage and high interface quality for future CMOS devices.
研究成果
Al2O3/HfO2 nanolaminate by thermal ALD effectively reduced the density of interface traps and leakage currents on Si0.7Ge0.3(100) surfaces. The formation of a Ge-free SiOx interlayer and Ge enrichment on the SiGe surface were observed, indicating the nanolaminate's effectiveness in preventing interfacial GeOx formation.
研究不足
The study focuses on the electrical properties and interface quality of nanolaminate structures on SiGe, but the long-term reliability and scalability for industrial applications are not addressed.
1：Experimental Design and Method Selection:
Al2O3/HfO2 nanolaminate gate stacks were deposited by atomic layer deposition (ALD) using HfCl4 and H2O precursors. Electrical properties of the interfaces were quantified by capacitance-voltage (C–V) spectroscopy.
2：Sample Selection and Data Sources:
A 12nm thick p-type Si0.7Ge0.3(100) with doping level of 2x1018 cm-3 was grown epitaxial on p-type Si(100) by molecular beam epitaxy (MBE).
3：7Ge3(100) with doping level of 2x1018 cm-3 was grown epitaxial on p-type Si(100) by molecular beam epitaxy (MBE).
List of Experimental Equipment and Materials:
3. List of Experimental Equipment and Materials: Beneq TFS-200 ALD reactor, Agilent B-1500 semiconductor analyzer, TEM with Energy-dispersive X-ray spectroscopy (EDS).
4：Experimental Procedures and Operational Workflow:
SiGe native oxides were removed by cyclic HF clean. HfO2 and Al2O3 were deposited by ALD. MOSCAPs were fabricated and annealed in forming gas.
5：Data Analysis Methods:
Density of interface traps (Dit) were calculated using the conductance method.
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