研究目的
To present a novel graphene-on-insulator (GOI) band-stop filter in the mid-infrared region and analyze its performance through numerical modeling.
研究成果
The proposed graphene-on-insulator band-stop filter demonstrates tunable resonance wavelength, modulation depth, and bandwidth in the mid-infrared region, making it suitable for ultra-fast active graphene-based plasmonic systems for THz applications.
研究不足
The study is limited to numerical modeling and simulation, without experimental validation. The practical fabrication and performance of the proposed filter under real-world conditions are not addressed.
1：Experimental Design and Method Selection
The finite-difference time-domain (FDTD) method was used to model the GOI basic and advanced filters and calculate their transmission spectra for different graphene layers at every gate-source voltage.
2：Sample Selection and Data Sources
The study focused on graphene layers deposited on a SiO2 substrate with specific dimensions and properties.
3：List of Experimental Equipment and Materials
Graphene layers, SiO2 substrate, gate-source voltage application setup.
4：Experimental Procedures and Operational Workflow
A plane electromagnetic wave in the wavelength range of 5 to 30 μm was used as an incident light source. The transmission and reflection were monitored with periodic boundary conditions in the x- and y- directions and the perfectly matched layer (PML) in the z-direction.
5：Data Analysis Methods
The resonance wavelength, modulation depth, and bandwidth were analyzed based on the transmission spectra obtained from the FDTD simulations.
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