研究目的
Investigating the optical, structural, and morphological properties of a CdSe-doped glass film prepared by a combinatorial PLD technique with potential applications for temperature sensing based on luminescence characteristics.
研究成果
The PLD CdSe-doped glass film exhibits promising optical, structural, and morphological properties for applications in photonics and optoelectronics, particularly for temperature sensing based on luminescence characteristics. The combinatorial PLD technique successfully replicated the stoichiometry of the target compounds in the deposited film, demonstrating the potential for creating nanocomposite materials with tailored properties.
研究不足
The study focuses on the synthesis and characterization of CdSe-doped glass films but does not explore their performance in specific optoelectronic devices or under varying environmental conditions.
1:Experimental Design and Method Selection:
The films were deposited by a combinatorial PLD (c-PLD) method using a KrF* excimer laser source. The deposition was conducted by simultaneous ablation of two targets (an un-doped phosphate glass and CdSe of 99.99% purity) at a residual pressure of 2 × 10?4 Pa.
2:99% purity) at a residual pressure of 2 × 10?4 Pa. Sample Selection and Data Sources:
2. Sample Selection and Data Sources: All the samples were deposited at room temperature on double-sided polished (100) silicon substrates.
3:List of Experimental Equipment and Materials:
KrF* excimer laser source, beam splitter, spectrophotometer (Perkin Elmer Lambda 1050), ellipsometry (UVISEL Horiba Jobin–Yvon device), spectrofluorometer (Horiba Jobin–Yvon Nanolog 3), LABRAM-HR 800 Horiba Jobin–Yvon spectrometer, Bruker D8 Advance device, Perkin Elmer Spectrophotometer-Spectrum 100, micro-Raman LabRAM HR 800, Gemini 500 Carl Zeiss scanning electron microscope, XE100 model from the Park System for AFM.
4:Experimental Procedures and Operational Workflow:
The laser beam was divided into two by means of a beam splitter. The laser repetition rate was 10 Hz. The target-to-substrate separation distance was set at 60 mm. Laser pulses of 10,000 and 5000 were applied for the deposition of c-PLD and PLD films, respectively.
5:Data Analysis Methods:
Optical absorption spectra, photoluminescence emission, XRD spectrum, FTIR and Raman spectroscopy, SEM-EDX and AFM analyses.
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spectrophotometer
Lambda 1050
Perkin Elmer
Used to investigate optical absorption spectra in the UV–Vis domain.
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ellipsometry device
UVISEL
Horiba Jobin–Yvon
Used to measure the absorption coefficient of the PLD CdSe-doped glass film.
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spectrofluorometer
Nanolog 3
Horiba Jobin–Yvon
Used to record photoluminescence emission of PLD CdSe-doped phosphate glass film.
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spectrometer
LABRAM-HR 800
Horiba Jobin–Yvon
Used for Raman spectroscopy and photoluminescence measurements.
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XRD device
D8 Advance
Bruker
Used to record the XRD spectrum for phase identification.
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scanning electron microscope
Gemini 500
Carl Zeiss
Used to investigate the morphology and elemental composition of the PLD CdSe-doped glass film.
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KrF* excimer laser
Used for the combinatorial PLD deposition of films.
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atomic force microscope
XE100
Park System
Used for atomic force microscopy investigations of the film surface.
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