研究目的
Investigating the effect of CO2 laser and its tool path on Silicon Carbide (SiC) for enhancing material removal rate and fabricating optical components and patterns.
研究成果
The hybrid polishing method significantly improved the material removal rate over conventional polishing, enabled the fabrication of deep grooves and a concave spherical mirror on SiC, though with some limitations in depth uniformity and manufacturing time.
研究不足
The process showed limitations in depth uniformity and maximum width of grooves, and the manufacturing time for spherical mirror fabrication was significantly higher than estimated.
1:Experimental Design and Method Selection:
The study involved creating laser pre-cracks on SiC followed by laser assisted polishing on the same tool path to investigate the material removal rate enhancement.
2:Sample Selection and Data Sources:
SiC samples of 50 mm × 50 mm × 10 mm were used.
3:List of Experimental Equipment and Materials:
CO2 laser beam system, dynamometer, RPM sensor, diamond and ceria slurry, polyurethane pad.
4:Experimental Procedures and Operational Workflow:
The process included laser pre-cracking, laser assisted polishing, and re-cracking every 30 min for some experiments.
5:Data Analysis Methods:
Surface profiler was used to measure the polished depth and material removal rate.
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