研究目的
Investigating the impacts of LPCVD wrap-around on the performance of n-type tunnel oxide passivated contact c-Si solar cell and methods to mitigate these impacts.
研究成果
Alkaline solution etching effectively removes polysilicon wrap-around, improving shunt resistance and solar cell efficiency. A champion efficiency of 22.81% was achieved, demonstrating the method's superiority over laser isolation.
研究不足
The study focuses on the impact of polysilicon wrap-around and methods to mitigate it, but does not explore other potential efficiency-limiting factors in TOPCon solar cells.
1：Experimental Design and Method Selection:
Fabrication of TOPCon silicon solar cells on N-type silicon substrates using LPCVD for ultra-thin tunnel oxide and polysilicon layers.
2：Sample Selection and Data Sources:
N-type Cz Si wafers with resistivity between
3：5 Ωcm~1 Ωcm. List of Experimental Equipment and Materials:
LPCVD system, Al2O3/SiNx deposition, laser isolation, alkaline solution etching.
4：Experimental Procedures and Operational Workflow:
RCA cleaning, texturization, boron diffusion, single side etching, LPCVD deposition, annealing, Al2O3/SiNx deposition, metallization.
5：Data Analysis Methods:
SEM, optical microscopy, TLM, EL imaging, light J-V characteristics measurement.
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