研究目的
Investigating the effect of 300 keV cobalt ions irradiations on the structural, morphological, optical and photovoltaic properties of Zn doped TiO2 thin films based dye sensitized solar cells.
研究成果
The study concludes that 300 keV Co ions irradiation with a fluence rate of 2 × 104 atoms cm-2s-1 on 1% Zn–TiO2 thin films significantly enhances the efficiency of DSSCs up to 3.78%. The improvement is attributed to the insertion of extra energy levels within the band gap of TiO2 and the creation of conductive patterns.
研究不足
The study is limited to the effects of Zn doping and Co ions irradiation on TiO2 thin films for DSSC applications. The research does not explore other doping materials or irradiation energies.
1:Experimental Design and Method Selection:
Sol-gel route was adopted to manufacture photo anodes of 1% Zinc doped titanium dioxide (Zn–TiO2) where FTO glass was used as substrate. These photo anodes were irradiated by 300 keV Cobalt (Co) ions with different fluence rates.
2:Sample Selection and Data Sources:
Four sets of TiO2, 1% Zn–TiO2 and 300 keV Co ions exposed Zn–TiO2 thin films having fluence rate of 2 × 104 and 4 × 104 atoms cm-2s-1 were prepared.
3:List of Experimental Equipment and Materials:
Raman spectroscopy, SEM (Quanta FEI), UV–Visible spectrophotometry (HITACHI U-2800), solar simulator (100 mW cm-2, AM
4:5, Newport). Experimental Procedures and Operational Workflow:
Thin films were immersed into N719 dye for 20 h. Graphene coated counter electrodes and photoanodes were sealed together in which liquid electrolyte iodide/tri-iodide was introduced.
5:Data Analysis Methods:
Raman spectra, UV–visible spectra, SEM micrographs, and current-voltage characteristics were analyzed.
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