研究目的
Investigating the growth mechanisms and process routes for the deposition of III-nitride thin films and device structures using organometallic vapor-phase epitaxy (OMVPE).
研究成果
The study demonstrates that OMVPE is a viable technique for the growth of III-nitride films and device structures, despite challenges related to substrate mismatch and defect density. Advances in substrate preparation, buffer layer deposition, and growth conditions have enabled the production of high-quality films suitable for optoelectronic and microelectronic devices. Future research should focus on reducing dislocation densities, improving In incorporation in InGaN films, and developing cost-effective GaN substrates.
研究不足
The growth of III-nitride films is challenged by large mismatches in lattice parameters and thermal expansion coefficients between the films and substrates, leading to high defect densities. The control of film composition, especially for InGaN, is complicated by the weak In-N bond and the low incorporation efficiency of In. The high cost and limited availability of large, low-defect GaN substrates also pose significant constraints.
1：Experimental Design and Method Selection:
The study involves the use of OMVPE for the deposition of III-nitride semiconductor films. The technique involves the gas-phase transport of organometallic precursors and associated carrier gases, hydrides containing nitrogen, and diluent gases including H2 and N
2：Sample Selection and Data Sources:
The substrates used include sapphire, SiC, and GaN in various orientations. The samples are prepared through annealing and nitridation processes.
3：List of Experimental Equipment and Materials:
The equipment includes OMVPE growth systems with temperature-controlled bubblers, reaction chambers with quartz walls, and graphite disks for heating. Materials include trimethylaluminum (TMAl), trimethylgallium (TMG), triethylgallium (TEG), trimethylindium (TMI), ammonia (NH3), and dopant sources like SiH4 and Cp2Mg.
4：Experimental Procedures and Operational Workflow:
The process includes substrate pre-treatment, deposition of buffer layers, and epitaxial growth of III-nitride films at temperatures ranging from 500 to 1600°C. The growth is monitored for microstructure and defect density.
5：Data Analysis Methods:
The analysis involves X-ray diffraction (XRD), atomic force microscopy (AFM), transmission electron microscopy (TEM), and photoluminescence spectroscopy to assess film quality, dislocation density, and optical properties.
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