研究目的
Investigating the resistive switching and electric field control of ferromagnetism in SnO2 films deposited at room temperature.
研究成果
The SnO2 film deposited at room temperature exhibits room temperature ferromagnetism and shows bipolar and multilevel resistive switching in Ta/SnO2/Pt devices. The saturation magnetization can be modulated by electric field with or without DC loop current, which is beneficial for developing new spintronic devices with low power consumption.
研究不足
The study is limited to SnO2 films deposited at room temperature and does not explore the effects of other deposition conditions or materials.
1：Experimental Design and Method Selection:
SnO2 films were deposited on Pt/Ti/SiO2/Si substrate at room temperature by sputtering technique using a SnO2 nonmagnetic ceramic target. The bipolar and multilevel resistive switching (RS) was observed in Ta/SnO2/Pt devices.
2：Sample Selection and Data Sources:
SnO2 films were prepared at different deposition temperatures and pressure ratios of Ar:O
3：List of Experimental Equipment and Materials:
X-ray diffractometer (D/max-2500, Rigaku), Field Emission Transmission Electron Microscope (FETEM, FEI-Tecnai G2F20), Keithley 2400 Source Meter, vibrating sample magnetometer (VersaLab, Quantum Design).
4：Experimental Procedures and Operational Workflow:
The resistive switching properties were measured under application of sweeping electric voltage. Magnetic measurements were performed using a vibrating sample magnetometer.
5：Data Analysis Methods:
The I-V curves and M-H loops were analyzed to study the resistive switching and ferromagnetism properties.
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