研究目的
To design, fabricate, and characterize a high-performance CMOS-compatible thermopile infrared detector with a self-test function based on XeF2 front-side dry etching.
研究成果
The fabricated CMOS-compatible thermopile IR detector with self-test function demonstrates high performance with a responsivity of 160.03 V/W, detectivity of 9.75×107 cm?Hz1/2, and a response time of 2.5 ms. The self-test function provides a convenient and effective method for performance monitoring.
研究不足
The study is limited by the CMOS-compatibility requirement, which restricts the choice of materials and fabrication processes. The self-test function's effectiveness is dependent on the heater's stability and temperature control.
1：Experimental Design and Method Selection:
The design involves using heavily doped N/P-polysilicon for thermocouples and XeF2 front-side isotropic etching for release and thermal isolation. A platinum heater is integrated for self-test functionality.
2：Sample Selection and Data Sources:
A 4-inch n-type silicon wafer with ?100? orientation is used as the starting material.
3：List of Experimental Equipment and Materials:
Equipment includes LPCVD for deposition, RIE for etching, and a thermostatic chamber for characterization. Materials include polysilicon, SiO2, Si3N4, and platinum.
4：Experimental Procedures and Operational Workflow:
The process involves deposition, doping, etching, annealing, and lift-off processes to fabricate the detector. Characterization includes IR radiation sensing and self-test measurements.
5：Data Analysis Methods:
The performance is evaluated based on responsivity, detectivity, and response time measurements.
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