研究目的
To investigate the effects of silicon doping on solution-processed indium oxide thin-film transistors (TFTs) and to explore the potential of Si-doped In-O (ISO) as a material for the fabrication of TFTs utilized in flat panel displays.
研究成果
Silicon doping significantly improved the stability of the In-Si-O amorphous structure and the performance of the TFTs, reducing the absolute value of threshold voltage and subthreshold swing. The optimal performance was achieved with a 3 at.% Si-doped TFT annealed at 400 °C, demonstrating the potential of solution-processed ISO TFTs for applications in flat panel displays.
研究不足
The study notes that high annealing temperatures are unsuitable for solution processing on substrates like glass and plastic. Additionally, the performance of solution-processed ISO TFTs, particularly in terms of mobility, was found to be lower than that of TFTs fabricated by sputtering methods.
1：Experimental Design and Method Selection
The study involved the fabrication of silicon-doped indium oxide thin-film transistors (TFTs) using a solution processing method. The Si concentration in the In2O3-SiO2 binary oxide structure was varied up to 15 at.% to study its effects on the film properties and TFT performance.
2：Sample Selection and Data Sources
SiO2 (250 nm)/Si (high doped p-type) wafers were used as substrates. The precursor solutions for spin coating were prepared by dissolving indium chloride (InCl3) powder in acetonitrile (CH3CN) solvent, with tetraethyl orthosilicate (TEOS) added for Si doping.
3：List of Experimental Equipment and Materials
X-ray reflectivity (XRR) and X-ray diffraction (XRD) techniques were used for structural characterization. A Rigaku Ultima IV system with Cu Kα radiation was employed for XRD measurements. Source and drain Al electrodes were deposited by thermal evaporation.
4：Experimental Procedures and Operational Workflow
The substrate was treated with NaOH to make it hydrophilic. The precursor solution was spin-coated onto the substrate, dried, and annealed at temperatures ranging from 250 °C to 800 °C. The TFTs were characterized using a Keysight B2912A system.
5：Data Analysis Methods
The GenX software was used to estimate film thicknesses, densities, and roughness from XRR profiles. Transfer and output characteristics of the TFTs were analyzed to determine device parameters such as mobility, threshold voltage, and on/off current ratio.
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