研究目的
Investigating the growth of high quality c-axis oriented n-type ZnO epitaxial films on p-type c-GaN/sapphire templates using a chemical vapor deposition technique and their application in UV photo detectors with high responsivity and fast response time.
研究成果
The study demonstrates the successful growth of high quality ZnO epitaxial films on p-GaN/sapphire templates using a CVD technique. The n-ZnO/p-GaN heterojunctions exhibit excellent rectifying behavior, high responsivity, and fast response times, making them suitable for solar blind UV detection. The performance of these devices is critically dependent on the microcrystalline quality of the ZnO layers.
研究不足
The study is limited by the dependence of device performance on the microcrystalline quality of the ZnO layers, which is influenced by the growth temperature. The spectral responsivity and fast response time are promising, but further optimization may be required for practical applications.
1：Experimental Design and Method Selection:
The study involves the growth of ZnO epitaxial layers on p-type c-GaN/sapphire templates using a chemical vapor deposition (CVD) technique with metallic zinc as the Zn source. The structural, morphological, and luminescence properties of the layers are investigated to optimize growth conditions.
2：Sample Selection and Data Sources:
Samples are grown at various growth temperatures ranging from 400 to 600 °C. The samples are characterized using high resolution scanning electron microscopy (FEG-SEM), atomic force microscopy (AFM), and x-ray diffraction (XRD).
3：List of Experimental Equipment and Materials:
Equipment includes a quartz reactor, mass flow controllers for oxygen and argon, a high resolution scanning electron microscope (FEG-SEM), atomic force microscope (AFM), and a high resolution x-ray diffractometer (Rigaku smartlab). Materials include Zn powder (99.999% purity), p-type c-GaN/c-sapphire templates, and Ti/Au contacts.
4：999% purity), p-type c-GaN/c-sapphire templates, and Ti/Au contacts.
Experimental Procedures and Operational Workflow:
4. Experimental Procedures and Operational Workflow: ZnO layers are grown by reacting Zn flux with reactive O at various temperatures. The duration of growth is 20 minutes for each sample. The structural quality is assessed using XRD, and the surface morphology is studied using SEM and AFM.
5：Data Analysis Methods:
The photo response properties are studied using a xenon arc lamp and an Acton monochromator to select different wavelengths. The spectral responsivity is calculated based on the photocurrent and dark current measurements.
独家科研数据包，助您复现前沿成果，加速创新突破
获取完整内容
