研究目的

Investigating the bias, temperature, and frequency dependence of two III–V double heterojunction bipolar transistors technologies based on InGaAs/InP and GaAsSb/InP processes for future terahertz (THz) systems.

研究成果

A scalable parameter extraction methodology using the HiCuM/L2 compact model has been successfully applied to type-I and type-II InP-based DHBT technologies, demonstrating excellent scaling and good agreement between the model and both dc and ac measurements. This allows generating a set of HiCuM/L2 model parameters for smaller geometries, predicting superior peak fT as well as current gain compared to that of the state of the art. However, further efforts are required to improve peak fMAX for future beyond 5G and THz technologies applications.

研究不足

The complexities with epitaxial growth present challenges due to the current blocking conduction band discontinuity at the base–collector junction. Heat dissipation is a concern for InP HBTs that requires special attention since it can become a reliability issue.