摘要： High performance capacitors have been investigated to meet higher integration density with optimized charge-storing capability. Here we introduce nonconventional thick film dielectric compositions based on 95BaTiO3-xZnF2-(2-x)BaF2-3glass (x=0.5, 1.0 and 1.5) where the relative content of ZnF2/BaF2 is critical in controlling dielectric behavior. The thick films were prepared on Cu foils by regular screen-printing and then firing at 950oC in inert atmosphere. As an optimal example, thick film composition modified with 1.0ZnF2/1.0BaF2 exhibited a dielectric constant of ~1,903 and a dielectric loss of ~0.04 at 1 MHz with dispersive dielectric relaxation behavior, which are far better than any reported corresponding values so far. Particularly, it was very interesting to observe that Curie Temperature was tunable from -19 oC to +34 oC, depending on the relative content of fluoride additives only within the 2 mol% range. Dependency of the relative contents of the fluorides is primarily investigated in regard to microstructure and dielectric properties.