研究目的
To demonstrate a III-V/Si hybrid semiconductor optical amplifier designed for Datacom wavelengths, capable of providing high optical gain to compensate optical losses on the integrated chip and amplify high-speed optical data with low power penalty.
研究成果
The III-V/Si hybrid SOA demonstrated high on-chip gain, output power, and bandwidth, with low noise figure and power penalty for data amplification. It can be integrated with other photonics components on a silicon chip to extend data link distances.
研究不足
The characterization was limited to O-band wavelengths, and the gain spectrum's shift to cover the entire O-band requires a change in gain material design. The measurement equipment limited the gain measurement from 1260 nm to 1310 nm.
1：Experimental Design and Method Selection:
The study utilized a wafer-scale bonding technology for fabricating the III-V/Si hybrid SOA. The device design included silicon/III-V tapers to reduce coupling loss and a reference device to factor out passive losses.
2：Sample Selection and Data Sources:
The SOA was fabricated at Intel’s photonics fabrication facility. A tunable laser was used to generate the input signal, and the output was detected using an optical spectrum analyzer and an optical power meter.
3：List of Experimental Equipment and Materials:
Equipment included a tunable laser, polarization controller, TEC controller, current source, fiber couplers, optical spectrum analyzer (OSA), and optical power meter (OPM).
4：Experimental Procedures and Operational Workflow:
The SOA was characterized by measuring on-chip gain, output power, noise figure, and bandwidth. The setup included aligning the input light with the TE polarization of the SOA waveguide and maintaining the chip temperature at 25 ℃.
5：Data Analysis Methods:
The OSA spectrum was analyzed for SOA gain and noise figure measurements. The OPM was used to monitor optical alignment.
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