研究目的
Investigating the effects of CF4 etching on 4H-SiC MOS capacitors, specifically on the breakdown electric field and interface trap density.
研究成果
The CF4 etching treatment on 4H-SiC surfaces increased the breakdown electric field of MOS capacitors and reduced interface trap density. The formation of Si-F bonds and reduction in carbon concentration in the oxide were key factors in improving the device characteristics.
研究不足
The study focuses on the effects of CF4 etching on 4H-SiC MOS capacitors but does not explore the long-term stability or performance under operational conditions. The etching process parameters may need optimization for different applications.
1：Experimental Design and Method Selection:
The study involved introducing fluorine atoms to the surface of 4H-SiC using a CF4 dry etching process, followed by the fabrication of MOS capacitors with dry-oxide.
2：Sample Selection and Data Sources:
N-type epitaxial layers on 4H-SiC substrates were used, with specific cleaning and etching treatments applied.
3：List of Experimental Equipment and Materials:
Reactive ion etching (RIE) apparatus, Atomic Force Microscope (AFM), X-ray Photoelectron Spectroscopy (XPS), and Secondary ion mass spectroscopy (SIMS) were used.
4：Experimental Procedures and Operational Workflow:
The substrates underwent surface cleaning, CF4 etching, dry oxidation, and metallization before characterization.
5：Data Analysis Methods:
Surface roughness, C-V curves, breakdown electric field distributions, and XPS spectra were analyzed to assess the effects of CF4 etching.
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