研究目的
Investigating the influence of oxygen vacancy behaviors during a cooling process on semiconductor gas sensors through numerical analysis.
研究成果
The numerical analysis method provides a precise description of oxygen vacancy behaviors during the cooling process and their impact on gas-sensing characteristics. The study concludes that the properties of gas sensors can be controlled or adjusted by the designed cooling process, offering a quantitative interpretation of the gas-sensing mechanism of semiconductors.
研究不足
The study makes several presumptions, including the linear dependence of oxygen vacancy density on the grain surface (NVS) on time and the exclusion of tunneling effects in the calculations. These approximations may lead to inaccuracies in the model's predictions.
1：Experimental Design and Method Selection:
The study employs a numerical analysis method based on the gradient-distributed oxygen vacancy model to describe the behaviors of oxygen vacancies during the cooling process. A diffusion equation is established to account for the effects of diffusion and exclusion.
2：Sample Selection and Data Sources:
The study focuses on semiconductor gas sensors, specifically analyzing the behavior of oxygen vacancies within these sensors during cooling processes.
3：List of Experimental Equipment and Materials:
The computational tool MATLAB is used for numerical analysis to find solutions to the diffusion equation.
4：Experimental Procedures and Operational Workflow:
The diffusion equation is solved numerically to illustrate oxygen vacancy distribution profiles and their dependence on cooling rate and temperature interval. Gas-sensing characteristics such as reduced resistance and response are calculated based on these distributions.
5：Data Analysis Methods:
The numerical solutions are used to evaluate the electrical characteristics of semiconductor gas sensors, including resistance and response to reducing gases. The influences of grain size effects, re-annealing effect, and controlled temperature interval on sensor properties are discussed.
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