摘要： Pulsed plasma processes open up the possibility of using very high plasma densities and modulated deposition in the synthesis of thin films and nanoparticles. The high plasma densities lead to a high degree of ionization of the source material, which creates new possibilities for surface engineering. Ions can, in contrast to atoms, be easily controlled with regard to their energy and direction, which is beneficial for thin film growth. Furthermore, ions can also increase the trapping probability of material on nanoparticles growing in the gas phase. The pulsed sputter ejection of source material also has other consequences: the material in the plasma and the material arrival on the growth surface will fluctuate strongly resulting in high level of supersaturation during pulse-on time. In this paper, an overview of the generation and properties of highly ionized pulsed plasmas is given. In addition, the use and importance of these types of discharges in the fields of thin-film and nanoparticle growth are also summarized.