研究目的
To extend the economic synthesis strategy of nitrogen-doped graphene (NG) film via chemical vapor deposition (CVD) method using a cheap aromatic precursor (1,10-phenanthroline) with heteroatom and planar-structure.
研究成果
The study successfully synthesized high-quality, large-scale, and uniform monolayer nitrogen-doped graphene (NG) film using a cheap aromatic precursor (1,10-phenanthroline) by a single CVD step. The growth temperature was found to positively tune the N doping level and type in the NG, suggesting a promising route for the practical application of graphene-based materials.
研究不足
The study focuses on the synthesis of NG films using a specific precursor and does not explore the application of these films in devices or compare their performance with other graphene-based materials.
1：Experimental Design and Method Selection:
The NG sheet was fabricated on Cu foil via CVD method using 1,10-phenanthroline as the precursor.
2：Sample Selection and Data Sources:
Cu foil (25 μm thick,
3：8 % purity) was cleaned and used as the substrate. List of Experimental Equipment and Materials:
SEM (Hitachi S-4800), TEM (Hitachi-2100), AFM (Bruker), UV-vis spectroscopy (Nanodrop-2000C spectrometer), Raman spectroscopy (Renishaw InVia micro-Raman system), XPS (K-alpha, USA).
4：Experimental Procedures and Operational Workflow:
The Cu foil was annealed at 1000 ℃ for half an hour under the 16 Pa pressure of 10 sccm H
5：The vapor of Phen precursor at 100 ℃ was conveyed to the Cu foil by H2 carrier. The growth was held for 30 min. Data Analysis Methods:
The morphology and structure of the samples were characterized by SEM, TEM, and AFM. UV-vis spectroscopy, Raman spectroscopy, and XPS were used to analyze the optical properties, quality, and element composition of the samples.
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