研究目的
Investigating the fundamental mechanism that governs the temperature-dependent sensitivity of Schottky contacted nanostructured heterojunction gas sensors.
研究成果
The study presents evidence of a connection between thermionic field emission and optimal gas sensing temperature, providing a theoretical explanation for the optimal sensing temperature. The kT/qE00 ratio can predict the optimal sensing temperature, and TFE is identified as the main transport mechanism for nanostructured Schottky barrier gas sensors.
研究不足
The study focuses on Pt/MoO3 and Pt/Ta2O5/MoO3 structures, and the findings may not be directly applicable to other material systems. The response and recovery times of the heterojunction device are slower due to traps in the transport mechanism.
1：Experimental Design and Method Selection:
Fabrication and characterization of Pt/MoO3 Schottky contacts and Pt/Ta2O5/MoO3 heterojunctions to study the connection between thermionic field emission (TFE) transport and optimal gas sensing temperature.
2：Sample Selection and Data Sources:
Use of n-type <100> Silicon (Si) wafers for substrate preparation, MoO3 nanobelts synthesized by thermal evaporation, and Ta2O5 layer deposited by RF sputtering.
3：List of Experimental Equipment and Materials:
SEM, TEM, XRD, XPS for characterization; Keithley 4200 series semiconductor parameter analyzer for I–V measurements; custom-built gas sealed stainless steel test chamber for gas testing.
4：Experimental Procedures and Operational Workflow:
Fabrication steps include substrate preparation, nanostructure synthesis, Ta2O5 layer deposition, and metal contact formation. Gas testing performed with H2 gas concentrations of 625, 1200, 2500, 5000 and 10,000 ppm at controlled temperatures.
5：Data Analysis Methods:
Analysis of I–V characteristics and calculation of kT/qE00 ratio to determine dominant transport mechanism.
独家科研数据包，助您复现前沿成果，加速创新突破
获取完整内容
