研究目的
Investigating the performance of titanium nitride resonators grown by atomic layer deposition for applications in quantum circuits, focusing on their kinetic inductance and quality factors.
研究成果
ALD-grown TiN films exhibit high kinetic inductance and quality factors suitable for quantum circuit applications. High impedance resonators show no significant degradation in quality factor, enabling enhanced coupling strengths for hybrid quantum systems and quantum sensing.
研究不足
The study is limited by the thinnest film that can be grown while maintaining superconductivity, potential oxide layer growth affecting film properties, and the challenge of impedance matching for the highest impedance resonators.
1：Experimental Design and Method Selection:
The study involves the fabrication of titanium nitride (TiN) thin films via atomic layer deposition (ALD) on hydrogen-terminated, high resistivity Si (111)-oriented substrates. The films are characterized for their superconducting properties and patterned into microwave resonators to study their performance in quantum circuits.
2：Sample Selection and Data Sources:
TiN films with thicknesses ranging from 9 nm to 110 nm are grown and characterized. The selection criteria include film thickness uniformity and superconducting critical temperature.
3：List of Experimental Equipment and Materials:
ALD system for TiN film deposition, optical and electron-beam lithography for patterning, inductively coupled plasma etcher for film etching, and a dilution refrigerator for microwave resonator measurements.
4：Experimental Procedures and Operational Workflow:
Films are deposited, patterned into resonators, and their superconducting properties are measured. Microwave transmission spectra are recorded to determine quality factors and impedances.
5：Data Analysis Methods:
The data is analyzed to extract quality factors, impedances, and coupling strengths, with fits to models describing two-level system losses and BCS theory deviations.
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