研究目的
Investigating the n-type semiconducting behavior of copper octafluorophthalocyanine (F8CuPc) in an organic field-effect transistor (OFET) under vacuum conditions.
研究成果
F8CuPc shows clear n-type semiconducting behavior in vacuum with a field effect electron mobility of 7.9 × 10?4 cm2 V?1 s?1. The larger overlap integral between the LUMOs in F8CuPc compared to F16CuPc suggests potential for higher electron mobility, indicating F8MPcs as good candidates for n-type semiconduction in organic electronics.
研究不足
The F8CuPc transistor is unstable in air, making it difficult to evaluate transistor characteristics under air conditions. The electron mobility in the F8CuPc film transistor is lower than that of F16CuPc, attributed to relatively low crystallinity in the as-deposited film.
1：Experimental Design and Method Selection:
The study involved growing a single crystal of F8CuPc, determining its crystal structure, and estimating the π–π overlap between the frontier orbitals of adjacent molecules using extended Hückel calculation. The charge transport properties of OFETs based on F8CuPc thin films were examined under air and vacuum conditions.
2：Sample Selection and Data Sources:
Single crystals of F8CuPc were grown by vacuum sublimation. XRD measurements were performed to analyze the crystal structure.
3：List of Experimental Equipment and Materials:
Automated Rigaku Rapid system for XRD, ADCMT 8252 electrometer for current-voltage characteristics, and vacuum deposition equipment for OFET fabrication.
4：Experimental Procedures and Operational Workflow:
F8CuPc was synthesized, crystallized, and characterized. OFETs were fabricated by vacuum deposition of F8CuPc on a SiO2/n-Si substrate, with Al electrodes deposited as source and drain. Measurements were conducted in air and vacuum.
5：Data Analysis Methods:
The overlap integral between molecular orbitals was estimated using extended Hückel calculation. Field effect electron mobility was calculated from current-voltage characteristics.
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