研究目的
To compare the structural and optical properties of transparent and conductive films of ZnO and ZnO:Al and to identify the consequences of the Burstein-Moss effect in the analyzed TCOs, in particular in relation to optical bandgap.
研究成果
Polycrystalline ZnO and ZnO:Al films were produced by RF reactive sputtering. The Al incorporation resulted in significant increases in orientation texture and crystallite sizes, with optical band gap values above intrinsic ZnO. The PL and optical absorption results confirm the Burstein-Moss effect as dominant in Al incorporated films.
研究不足
The study focuses on the structural and optical properties of ZnO and ZnO:Al films, with limited discussion on electrical properties. The effects of other dopants or deposition conditions are not explored.
1：Experimental Design and Method Selection:
Thin films of ZnO and ZnO:Al were deposited onto glass and silicon substrates by RF magnetron sputtering using Zn and ZnAl metallic targets.
2：Sample Selection and Data Sources:
Glass and silicon substrates were cleaned before loading onto the sample holder.
3：List of Experimental Equipment and Materials:
RF magnetron sputtering system, X-ray diffractometer (PanalyticalX'Pert Powder), Perkin Elmer spectrophotometer, Kimmon Helium-Cadmium laser, Spex 1780 monochromator, RCA GaAs photo-multiplier, digital Keithley 617 electrometer.
4：Experimental Procedures and Operational Workflow:
Films were deposited with a plasma source maintained at a frequency of
5：56 MHz and power of 100 W. XRD, optical transmittance and reflectance, and PL spectroscopy were performed. Data Analysis Methods:
XRD data were used to estimate crystallite size by the Scherrer equation. Optical band gap was calculated using the recurrent expression for direct band gap semiconductors.
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